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In-situ electrical characterization of co-evaporated Zr-V, Zr-Ti and Zr-Co thin getter films during thermal activation

机译:热活化过程中共蒸发的Zr-V,Zr-Ti和Zr-Co薄膜吸气剂的原位电学表征

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Sheet resistance of transition metal thin getter films was recorded during activation at 250°C-1h15 by in-situ 4-probes measurement under vacuum. Co-evaporated alloys of Zr-V, Zr-Ti, Zr-Co with different compositions were studied. Results show that resistivity and temperature coefficient of resistance (TCR) are linked and follow the Mooij rule. Several degrees in structure disorder were deduced from the less - pure metals to Zr-Ti then Zr-V - and the highest, i.e. Zr-Co. In case of Zr-Ti, the grain size directly impacts the TCR and the resistivity in as-deposited state, then the oxygen content after activation of the getter at 250°C. For Zr-V and Zr-Co, the amorphous structure has to be taken into account, but their increased structure disorders allow them to sorb more gaseous species than Zr-Ti.
机译:通过在真空下进行原位四探针测量,在250°C-1h15的活化过程中记录了过渡金属吸气剂薄膜的薄层电阻。研究了不同组成的Zr-V,Zr-Ti,Zr-Co共蒸发合金。结果表明,电阻率和电阻温度系数(TCR)相互关联,并且遵循Mooij规则。从纯度较低的金属到Zr-Ti,然后是Zr-V,到最高的金属,即Zr-Co,可以推断出几度的结构紊乱。在Zr-Ti的情况下,晶粒尺寸直接影响TCR和沉积状态下的电阻率,然后在250°C下激活吸气剂后的氧含量。对于Zr-V和Zr-Co,必须考虑无定形结构,但是它们增加的结构紊乱使它们比Zr-Ti吸收更多的气态物质。

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