Asymmetric S/D contacts with BN tunneling barrier on black phosphorous FETs

摘要

This paper reveals the significance of contact tunneling barrier for narrow bandgap black phosphorus (BP) PMOSFETs. Without the tunneling barrier, record high I of 940μA/μm is achieved however I is also increased due to the reverse electron tunneling current. With an asymmetric BN tunneling barrier at source side, I is reduced by a factor of 5×10 at a cost of 20% I reduction.