For the past decade, III–V materials have been an invaluable option for beyond-CMOS logic applications. In the landscape of alternatives to Si CMOS for beyond-the-roadmap logic applications, III–V compound semiconductors really stand out. InGaAs, for example, looks particularly promising. Since room temperature bulk electron mobility of InGaAs is easily in excess of 10,000 cm/V-s, it is imperative to consider this material as a channel for next-generation logic technology and for ultra-high frequency applications. This talk will summarize recent progress in our quest to map out the potential of III–V compound semiconductor, identify issues of relevance to future III–V transistors for logic applications, and propose innovative schemes to overcome existing technology bottlenecks.
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机译：在过去的十年中，III-V材料一直是超越CMOS逻辑应用的宝贵选择。在超越路线图逻辑应用的Si CMOS替代品领域中，III–V类化合物半导体确实脱颖而出。例如，InGaAs看起来特别有前途。由于InGaAs的室温体电子迁移率很容易超过10,000 cm / V-s，因此必须将这种材料视为下一代逻辑技术和超高频应用的通道。本演讲将总结我们在寻求III–V化合物半导体的潜力，确定与未来III–V晶体管在逻辑应用中相关的问题方面的最新进展，并提出克服现有技术瓶颈的创新方案。
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