Study of poly etch for performance improvement with alternative spin-on materials in FinFET technology node

摘要

In this paper, we systematically investigate the poly etch performance with three different kinds of spin-on materials (BL organic coating material, and two other spin-on materials A and B) in P2 cut process from the point view of defect and process control. Our results show that with one kind of new spin-on material B, the bubble defect performance can be significantly improved. With different gas ratio control, we can achieve comparable etch rate selectivity of B to the hard mask. Thus, the P2 cut process can be well controlled. Finally, we delivered one process with B coating material.