Thermal Analysis of Lateral GaN HEMT Devices for High Power Density Integrated Motor Drives Considering the Effect of PCB Layout and Parasitic Parameters

摘要

A high power density inverter is one of the most important design requirements for a compact and energy-efficient integrated motor drive (IMD) design. Agallium nitride (GaN) high electron mobility transistor (HEMT) has a lateral device structure with land grid array (LGA) or ball grid array (BGA) package for minimum parasitic inductance and resistance, which is also advantageous in a thermal management. This paper presents a new thermal management methodology for a high power density IMD using GaN HEMTs. An optimized printed circuit board (PCB) design is investigated for an effective bottom-side cooling method without any heatsink. The parasitic components are also analytically estimated to prove the validity of the proposed circuit design.