Direct Non-contact Electrical Measurement of Low-k Damage in Patterned Low-k Films by a Near-Field Scanned Microwave Probe

摘要

We demonstrate a near-field scanned microwave probe and specific test keys for direct non-contact electrical measurement of low-k dielectric constant and damage after deposition, during trench/via processing, and after metallization. This work successfully defines the dielectric constant and the thickness of the damaged layer in patterned low-k films, and is the first demonstration of a metrology for electrical in-line measurements of low-k damage. Furthermore, we point out the integration issue of porous low-k by using this novel technique.