Metal/P-type GeSn Contacts with Specific Contact Resistivity down to 4.4×10?10 Ω-cm2

摘要

Ga and Sn surface-segregated p^{+-GeSn (Seg. p+-GeSn) was grown by molecular beam epitaxy (MBE) to achieve an average active Ga doping concentration of 3.4×1020 cm-3 and surface Sn composition of more than 8%. This enables the realization of record-low specific contact resistivity ρ_c down to 4.4×10-10 Ω-cm2. The average ρ_c extracted from 14 sets of Ti/Seg. p+-GeSn Nano-TLM test structures, a collection of more than 90 devices is 6.5×10-10 Ω-cm2. This is also the lowest ρ_c for non-laser-annealed contacts. Ti contacts to p+-GeSn films with and without Ga and Sn surface segregation were fabricated. It is shown that the segregation of Ga and Sn at the Ti/p+-GeSn interface leads to 50% reduction in ρ_c as compared with a sample without segregation.}