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1.5×10-9 Ω·cm2 contact resistivity on highly doped Si:P using Ge pre-amorphization and Ti silicidation

机译：Ge预非晶化和Ti硅化作用在高掺杂Si：P上的接触电阻率为1.5×10-9Ω·cm2

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status: published

机译：状态：已发布

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Yu Hao; Schaekers Marc; Rosseel Erik; Peter Antony; Lee Joon-Gon; Song Woo-Bin; Demuynck Steven; Chiarella Thomas; Ragnarsson Lars-Ake; Kubicek Stefan; Everaert Jean-Luc; Horiguchi Naoto; Barla Kathy; Kim Daeyong; Collaert Nadine; Thean Aaron; De Meyer Kristin;
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年度 2015
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专利

1. TiSi(Ge) Contacts Formed at Low Temperature Achieving Around 2×10−9 Ω cm2 Contact Resistivities to p-SiGe [J] . Hao Yu, Marc Schaekers, Jian Zhang, Electron Devices, IEEE Transactions on . 2017,第2期

机译：在低温下形成的TiSi（Ge）接触点与p-SiGe的接触电阻约为2×10-9Ωcm2
2. Impact of Ge pre-amorphization implantation on Co/Co-Ti~+-Si contacts in advanced Co interconnects [J] . Zhang Dan, Xu Jing, Gao Jianfeng, Japanese journal of applied physics . 2020,第SL期

机译：GE Pre-Amorphization植入在高级CO互连中CO / CO-TI / N〜+ -SI触点的影响
3. Improved Ti germanosilicidation by Ge pre-amorphization implantation (PAI) for advanced contact technologies [J] . Mao Shujuan, Wang Guilei, Xu Jing, Microelectronic Engineering . 2018,第DECa期

机译：通过Ge预非晶化注入（PAI）改进的Ti锗硅化技术，用于先进的接触技术
4. 1.5¿¿10¿¿¿9 ¿¿¿cm2 Contact resistivity on highly doped Si:P using Ge pre-amorphization and Ti silicidation [C] . H. Yu, M. Schaekers, E. Rosseel, IEEE International Electron Devices Meeting . 2015

机译：使用Ge预非晶化和Ti硅化处理在高掺杂Si：P上的接触电阻率1.5¿10¿¿¿9¿¿cm2
5. Formation of low-resistivity germanosilicide contacts to phosphorus doped silicon-germanium alloy source/drain junctions for nanoscale CMOS. [D] . Mo, Hongxiang. 2004

机译：低电阻率的锗硅化物接触层形成了用于纳米级CMOS的磷掺杂的硅锗合金源/漏结。
6. Bi-stable resistive switching characteristics in Ti-doped ZnO thin films [O] . Adnan Younis, Dewei Chu, Sean Li 2013

机译：掺钛ZnO薄膜的双稳态阻变特性
7. Transport Properties of Flexible Composite Electrolytes Composed of Li1.5Al0.5Ti1.5(PO4)3 and a Poly(vinylidene fluoride-co-hexafluoropropylene) Gel Containing a Highly Concentrated LiN(SO2CF3)2/Sulfolane Electrolyte [O] . Ji-young Ock, Miki Fujishiro, Kazuhide Ueno, 2021

机译：由Li1.5Al0.5Ti1.5（PO4）3组成的柔性复合电解质的运输性能含有高浓度的Li N（SO2CF3）2 /磺胺电解质的聚（偏二氟乙烯 - 共六氟丙烯）凝胶
8. Low resistivity ohmic contacts to moderately doped n-GaAs with low temperature processing [R] . Lovejoy, M. L. , Howard, A. J. , Zavadil, K. R. , 1994

机译：低温电阻欧姆接触中等掺杂的n-Gaas，低温处理

1.5×10-9 Ω·cm2 contact resistivity on highly doped Si:P using Ge pre-amorphization and Ti silicidation

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