Phase-Transition-FET exhibiting steep switching slope of 8mV/decade and 36 enhanced ON current

摘要

Vanadium dioxide (VO2), which exhibits electrically induced abrupt insulator-to-metal phase transition (IMT), is monolithically integrated with Silicon MOSFET to demonstrate a steep-slope (sub-kT/q) Phase-Transition FET (Phase-FET). The Phase-FET exhibits switching-slope (SS) of 8mV/decade leading to 36% increase in ON current (ION) over baseline MOSFET. We analyze the electrical characteristics of several threshold-switching materials with enhanced resistivity ratios (>105) beyond VO2 and harness them to enhance the performance of 14nm node FinFETs. Our analysis shows that up to 2.9× increase in ION, and 1.86× reduction in energy at (iso-delay) for an 11 stage ring oscillator (RO) is achievable with Phase FETs using Cu-doped HfO2 threshold switches.