Dual delta tunnel FET: An energy efficient switch with improved current switching ratio and steeper subthreshold slope

摘要

In this paper, a single gate tunnel FET has been designed with two delta layers in both the source and channel regions. The width, position and doping concentration of both the delta regions are optimized to maximize the current switching ratio. The simulation work of the present DD-TFET device has been carried out by 2-D TCAD device simulator from Synopsys and the results are compared with the results of source delta doped TFET (SD-TFET), channel delta doped TFET (CD-TFET) and conventional TFET. The proposed device exhibits its superiority over other designs in terms of ON-state current, current switching ratio and subthreshold swing. Thus DD-TFET can be used as an energy efficient switch and has the potential to replace MOSFETs in high-speed and low-power applications.