首页> 外文会议>International Conference on Electromagnetics in Advanced Applications >A Scan-Based Pre-Bond Test of Through-Silicon Vias with Open and Short Defects
【24h】

A Scan-Based Pre-Bond Test of Through-Silicon Vias with Open and Short Defects

机译:通过硅通孔的基于扫描的扫描前键测试,具有开放和短缺

获取原文

摘要

Testing pre-bonded through silicon vias (TSVs) is vital to retain a high yield for three-dimensional integrated circuits (3D IC). In this paper, we present a scan-based method for the pre-bond test of TSVs. The proposed circuit is able to detect open and short defects of TSVs, which is well compatible with digital technology. The inherent compact and low-power capabilities are suitable for testing a large number of TSV in an array.
机译:通过硅通孔(TSV)预粘合的测试对于保持三维集成电路(3D IC)至关重要。在本文中,我们介绍了一种基于扫描的TSV粘结测试方法。所提出的电路能够检测TSV的开放和短缺,与数字技术良好。固有的小型和低功耗功能适用于在阵列中测试大量TSV。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号