Electrothermal simulation of Resistive Random Access Memory(RRAM) array using finite difference method

摘要

Memory is very important in the present era of Internet of Thing (IoT) and Big Data, while Resistive Random Access Memory (RRAM) is a key member in the family of non-volatile memory. However, in the development of high density RRAM memory array, self-heat effect (SHE) as well as thermal crosstalk must be understood and controlled during its operation. In this paper, simulation of electrothermal effects in both single RRAM cell and 3×3×3 array are performed using our in-house developed algorithm, which is validated in comparison with that of commercial software COMSOL. Further on, hybrid effects of different geometrical and material parameters on the memory performance are characterized and addressed.