Detection and characterization of single MOS interface traps by the charge pumping method

摘要

We made systematic measurements of the maximum charge pumping current from single MOS interface traps, and found that two energy levels are formed per trap, and the current shows various values of 0~2fq (f: the gate pulse frequency, q: the electron charge), depending upon the two energy levels. Moreover, we demonstrated fundamental trap counting, and found that the variability in the actual number of traps is quite large.