Method and Apparatus for the characterization of interface trap using photo-excited charge-collection spectroscopy, and Recording medium thereof

摘要

PURPOSE: A method for analyzing interfacial defects using photoelectric spectroscopy, a recording media for the same, and an apparatus for the same are provided to minimize the deformation of analyzing specimen under an analyzing process using an optical signal. CONSTITUTION: Single wavelength optical signals are applied to the interface between the channel semiconductor(8) and the gate insulating film(7) of a transistor according to the order from a long wavelength to a short wavelength. Threshold voltages for each wavelength are measured based on the relation between gate voltages and drain currents for each wavelength. The defect electric charge amount of the interface is calculated, based on the threshold voltages. The concentration of defects per energy level is calculated based on the defect electric charge amount.