Single crystal AlGaN bulk acoustic wave resonators on silicon substrates with high electromechanical coupling

摘要

Bulk acoustic wave (BAW) resonators using single crystal AlGaN piezoelectric films are reported. Metal-organic chemical vapor deposition (MOCVD) growth was used to obtain single crystal AlGaN films on 150-mm diameter silicon substrates with (0002) XRD rocking curve FWHM of 0.37¿¿. Series-configured 12 ¿¿ BAW resonators with resonant frequency of 2.302GHz were fabricated with insertion loss of 0.29dB and an electromechanical coupling of 4.44%. Maximum resonator Qmax was 1277, leading to a figure of merit (FOM) of 57. Unloaded acoustic Qr was 4243, leading to a FOM of 188. These FOM are the highest reported to date for MOCVD-based single crystal resonators.