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Full-Wave Analysis of Ultrahigh Electromechanical Coupling Surface Acoustic Wave Propagating Properties in a Relaxor Based Ferroelectric Single Crystal/Cubic Silicon Carbide Layered Structure

机译:弛豫基铁电单晶/碳化硅层状结构中超高机电耦合表面声波传播特性的全波分析

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This paper describes a full-wave analysis of ultrahigh electromechanical coupling surface acoustic wave (SAW) of Y-cut X propagating Pb(In_(1/2)Nb_(1/2))O_3-Pb(Mg_(1/3)Nb_(2/3))O_3-PbTiO_3 (YX-PIMNT) single crystals on a cubic silicon carbide (3C-SiC) substrate. There are several eigenmodes including shear horizontal (SH) and Rayleigh SAWs. Based on the finite-element method (FEM), the phase velocity (v_p) and coupling factor (K~2) of SAWs varying with the top electrode thickness, thickness, and Euler angle (θ) of the YX-PIMNT substrate have been investigated. K~2 of SH SAW can reach an extremely high value of 75.9%. The proper control of structural parameters can suppress unwanted responses caused by other modes without deteriorating the coupling factor. The large K~2 value of SH SAW and suppression of unwanted responses have highly promising applications in developing ultrawideband and tunable SAW filters. Finally, the performance of 3C-SiC and 6H-SiC as substrates was investigated, and 3C-SiC was identified as a more attractive substrate candidate than 6H-SiC.
机译:本文介绍了Y形X传播Pb(In_(1/2)Nb_(1/2))O_3-Pb(Mg_(1/3)Nb_的超高机电耦合表面声波(SAW)的全波分析。在立方碳化硅(3C-SiC)衬底上的(2/3))O_3-PbTiO_3(YX-PIMNT)单晶。有几种本征模式,包括水平剪切(SH)和瑞利声表面波。基于有限元方法(FEM),SAW的相速度(v_p)和耦合因子(K〜2)随YX-PIMNT基板的顶部电极厚度,厚度和欧拉角(θ)而变化。调查。 SH SAW的K〜2可以达到75.9%的极高值。适当控制结构参数可以抑制由其他模式引起的有害响应,而不会降低耦合系数。 SH SAW的大K〜2值和抑制不必要的响应在开发超宽带和可调谐SAW滤波器方面具有广阔的应用前景。最后,研究了3C-SiC和6H-SiC作为基材的性能,并确定3C-SiC是比6H-SiC更有吸引力的基材候选材料。

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  • 来源
    《Modelling and simulation in engineering》 |2017年第2017期|7078383.1-7078383.6|共6页
  • 作者单位

    Department of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China;

    Department of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China;

    Department of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China;

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