机译:弛豫基铁电单晶/碳化硅层状结构中超高机电耦合表面声波传播特性的全波分析
Department of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China;
Department of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China;
Department of Electronic Information and Electrical Engineering, Shanghai Jiao Tong University, Shanghai 200240, China;
机译:具有弛豫的铁电单晶/金刚石层状结构的超宽带声表面波器件的相速度增大
机译:无铅Na0.5bi0.5tio3-BATIO3单晶高机电耦合表面声波的理论分析
机译:超高机电耦合表面声波在Pb(In_(1/2)Nb_(1/2))O_3-Pb(Mg_(1 / 3Nb_(2/3))O_3-PbTiO_3晶体中传播的理论分析
机译:011极化的基于弛豫的铁电单晶中表面声波传播特性的模拟
机译:4H碳化硅散装晶体,外延层和功率装置的缺陷结构分析
机译:弛豫的机电性质的取向依赖基于铁电单晶
机译:反应烧结碳化硅和单晶4H碳化硅阳极氧化抛光表面性能的比较分析
机译:立方碳化硅(3C siC):甲基三氯硅烷在氢气中热分解制备的单晶和多晶层的生长和性质