Bias stress study of Metal-Insulator-Semiconductor structures with pulsed laser deposited InGaZnO on atomic layer deposited HfO2

摘要

Bias stress study is presented in Metal-Insulator-Semiconductor structure using Indium-Gallium-Zinc oxide film on top of HfO, deposited by pulsed laser deposition and atomic layer deposition, respectively. The produced effect on this interface is analyzed through hysteresis measurements at different bias conditions for several periods of time.