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ATOMIC LAYER DEPOSITED NANOLAMINATES OF HfO2/ZrO2 FILMS AS GATE DIELECTRICS
ATOMIC LAYER DEPOSITED NANOLAMINATES OF HfO2/ZrO2 FILMS AS GATE DIELECTRICS
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机译:HfO2 / ZrO2薄膜作为门介电体的原子层沉积纳米
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摘要
A dielectric film containing a nanolaminate with a hafnium oxide layer and a zirconium oxide layer and a method of fabricating such a dielectric film produce a reliable gate dielectric having an equivalent oxide thickness thinner than attainable using silicon oxide.
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