SEGR/SEB test results on emerging Hi-Rel power MOSFETs

摘要

Test results for several newly available Hi-Rel total dose hardened power MOSFETs are presented. The safe-operating-area (SOA) of several devices were determined with Ag and Xe ions having incident LETs of 42.2 and 53.1 MeV cm~2/mg, respectively. Test results show these devices are comparable to currently available total dose hardened technology.