Multi-subband interface roughness scattering using 3D Finite Element Monte Carlo with 2D Schödinger equation for simulations of sub-16nm FinFETs

摘要

A new multi-subband interface roughness scattering model is incorporated into a 3D Finite Element ensemble Monte Carlo simulator with 2D Schrödinger equation based quantum corrections. The model takes advantage of wavefunctions and energy levels obtained in solutions of Schrödinger equation on 2D slices across the channel to calculate the respective form factors. The new 3D simulation toolbox is then used to predict the performance of SOI Si FinFETs with 10.7 nm gate length and two cross-sections: rectangular-like (REC) and triangular-like (TRI).We found that the multi-subband IRS is much stronger at large electron kinetic energies resulting in a drive current of 600 mA/µm for the REC shaped channel and of 491 mA/µm for the TRI channel.