An investigation of CeO2 based ReRAM with p+ and n+-Si bottom electrodes

摘要

In this paper we use the p-Si and n-Si as bottom electrode for CeO based ReRAM. The work function difference between p-Si and n-Si substrate gives out an about 0.6 V shift of the set and reset voltage. The mechanism of this shift was investigated and the set and reset of voltage with pulse width dependence was also concerned depends on p-Si substrate.