首页> 外文会议>China Semiconductor Technology International Conference >Use soft-decision error-correction codes in Phase-Change Memory
【24h】

Use soft-decision error-correction codes in Phase-Change Memory

机译:在相变存储器中使用软判决纠错码

获取原文
获取外文期刊封面目录资料

摘要

Researches indicate that the resistance of phase-change material will become larger over the time. Use time-aware based soft-decision error correction code, which needs LLR to decode, can correct the errors in multilevel PCM effectively. Accurate LLR needs to read the resistance accurately, which will lead to a longer transmission latency. In this paper, we proposed a non-uniform correction strategy, which can reduce the read levels maintaining bit-error-rate performance. We use LDPC in correction of 4-level per cell PCM, and get the result via computer simulation.
机译:研究表明,相变材料的电阻会随着时间的流逝而变大。使用基于时间的基于软判决的纠错码(需要LLR解码),可以有效地纠正多级PCM中的错误。准确的LLR需要准确读取电阻,这将导致更长的传输延迟。在本文中,我们提出了一种非均匀校正策略,该策略可以降低读取级别,从而保持误码率性能。我们使用LDPC校正每个单元PCM的4级电平,并通过计算机仿真获得结果。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号