On the degradation kinetics and mechanism of AlGaN/GaN HEMTs under high temperature operation(HTO) stress

摘要

We have submitted the AlGaN/GaN High electron mobility transistors (HEMTs) to the high temperature operation(HTO) temperature step stress experiment to investigate the degradation kinetics at long term HTO stress. Several degradation characteristics of DC parameters such as the reduction of on-state current, the decrease of transconductance, and the shift of threshold voltage were identified. The Photo Emmission Microscopy (PEM) technique was used to characterize the degradation mechanism under HRO stress. The chemical deprocess technique were performed to further analysis the degradation mechanism. The results showed that the degradation was related to the localized structural degradation along the drain-side edge of the fingers.