hafnium compounds; resistive RAM; semiconductor device reliability; tantalum compounds; titanium compounds; HfOsub2/sub; TiN-Tasub2/subOsub5/sub-Ta; electrical switching simulation; electrode materials; programming pulses; scaled RRAM cells; Degradation; Electrodes; Materials; Standards; Switches; Temperature; Tin;
机译:<![CDATA [CDATA [对AL-DOPED NA的计算和实验理解
机译:<![CDTA [SRCO的结构,热和电化学性能
机译:<![cdata [li
机译:Ta清除剂电极在可扩展的小电流TiNTa
机译:低速冲击对复合自行车下管的影响研究
机译:趋磁细菌中磁铁矿(Fe(inf3)O(inf4))和钙铁矿(Fe(inf3)S(inf4))的受控生物矿化
机译:利用氧化还原性氧化物燃料电池的性能提高了氧化还原的PR $ LT; inf $ 0.6 $ / inf $ sr inf $ 0.4 $ / inf $ co $ inf $ 0.2 $ / inf $ fe $ inf $ 0.8 $ / inf $ o $ inf $ 3-delta $ / inf $ 电极