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SPICE model parameters extraction taking into account the ionizing radiation effects

机译:考虑电离辐射效应的SPICE模型参数提取

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摘要

Universal SPICE macro-model of Si bipolar junction transistor (BJT) and SiGe heterojunction bipolar transistor (HBT) taking into account total irradiation dose effects is presented. A method of macro-model radiation-dependent parameters extraction from the measured data is described. The advantage of the proposed method is simplicity of parameter definition. Simulated and measured transistor characteristics are in a good agreement.
机译:提出了考虑了总辐照剂量效应的Si双极结型晶体管(BJT)和SiGe异质结双极型晶体管(HBT)的通用SPICE宏模型。描述了一种从测量数据中提取与辐射有关的参数的宏模型的方法。该方法的优点是参数定义简单。模拟和测量的晶体管特性非常吻合。

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