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SI/PI Co-simulation including voltage regulating circuitry for high-performance multi-chip package

机译:SI / PI协同仿真,包括用于高性能多芯片封装的稳压电路

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As new NAND specification such as Toggle 2.0 has been standardized and developed, supply voltage has been reduced from 3.3V to 1.8V because of the adoption of high-speed I/O. Accordingly, due to issues of the backward compatibility with previous specifications and the power budget, voltage regulator implemented in a package should supply the power to the I/Os. In this paper, we propose the advanced SI/PI co-simulation methodology including voltage regulator circuitry for high-performance multi-chip packages. It is shown that the proposed simulation can detect the vulnerability of PDN related to the output of voltage regulator in the design stage of high-perfomance multi-chip packages, and can help optimize PCB design including PDN. It is also shown that the simulation are in good agreement with measurements.
机译:由于新的NAND规范,如折叠2.0已被标准化和开发,由于采用高速I / O,电源电压从3.3V降至1.8V。因此,由于与先前规格的后向兼容性和电源预算的问题,包装中实现的电压调节器应将电源提供给I / O.在本文中,我们提出了先进的SI / PI共模方法,包括用于高性能多芯片封装的电压调节器电路。结果表明,所提出的模拟可以检测PDN与高水平多芯片封装设计阶段的电压调节器输出相关的漏洞,并且可以帮助优化包括PDN的PCB设计。还表明,模拟与测量很好。

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