Exploration of PLAD aluminum implants for work function adjustment

摘要

It is well known that aluminum ion implant can shift the flatband voltage (Vfb) in hafnium-oxide high-k/metal gate PMOS 3D devices [1, 2]. The current work focuses on using a high-throughput plasma doping tool for aluminum implantation into metal-oxide-semiconductor capacitor (MOSCAP) structures as a test of work-function adjustment in PMOS devices.