Demonstrating Valence Band-Edge Effective Work Function by Aluminum Implantation in High-k/Metal Gate p-MOSFET with Incorporated Fluorine

摘要

This work demonstrates the valence band-edge effective work function (φ m ,eff) of a titanium nitride (TiN) gate with a hafnium oxide (HfO2) dielectric using a cost-effective, low-complexity gate-first integration scheme. Aluminum (Al) ion implantation following TiN gate stack formation yielded a φ m ,eff of 5.0 eV without an equivalent oxide thickness penalty. Additionally, the incorporation of fluorine (F) into the HfO2 dielectric by the channel implantation approach further improved φ m ,eff to 5.1 eV. This technique for modulating φ m ,eff has potential for threshold-voltage tuning without any process complexity in high-k/metal gate low-power applications.