The features of cold boron implantation in silicon

摘要

In recent years silicon doping aimed at ultrashallow p-n junction formation is very often performed at low temperatures. This work shows that films condensed in the solid phase from gas molecules of the residual atmosphere in the implantation chamber can appear on the silicon surface at low temperature (83K) implantation of boron ions. These condensed films can bring about a decrease in the projected range of the boron ions. The observed effect was used in this work to produce ultrashallow layers of boron atoms in silicon wafers from the BF film condensed in the solid phase on the silicon surface by the recoil implantation technique.