CMOS 0.18 µm standard process capacitive MEMS high-Q oscillator with ultra low-power TIA readout system

摘要

This paper presents the first monolithic ultra-low power MEMS oscillator that can be manufactured in the ASIC compatible standard CMOS process and monolithically integrated with TIA circuitry. It is designed for high Q value and moderate motional impedance under strict design constraints of the standard fabrication process. A high gain ultra-low power sustaining TIA amplifier circuit is compactly integrated with the resonator structure on a single die for low-power 32 kHz clock generation. The proposed 1.69µW MEMS oscillator can be embedded in common SoC applications monolithically to provide clock sources.