Study on oxide thickness dependence of current-voltage characteristics for HfO_x based ReRAM device

摘要

In this letter, we investigated HfO_x thickness dependence of current-voltage characteristics and temperature dependence of resistance for Ni/HfO_x/Pt resistance random access memory (ReRAM) device. There was a significant difference in switching properties between these devices whose oxide thicknesses differ only 1 or 2 nm. The devices showed bipolar resistive switching behaviors. The ON state resistance indicated a linear decrease of resistance with lowering temperature, which was typical for a metal. It should be noted that SET voltage as well as resistance of high resistance state increased almost linearly with increasing oxide thickness from 4.0 to 5.6 nm.