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A 127–140GHz injection-locked signal source with 3.5mW peak output power by zero-phase coupled oscillator network in 65nm CMOS

机译:零相位耦合振荡器网络在65nm CMOS中的127–140GHz注入锁定信号源,峰值输出功率为3.5mW

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A high output power and high efficiency injection-locked millimeter-wave (mm-wave) signal source is demonstrated by zero-phase coupled oscillator network (CON) at 140GHz. Each oscillator unit-cell is designed by an inter-digital coupler with zero-phase shift and 0.4dB loss at 70GHz, and is further doubled to 140GHz by a push-push frequency doubler. With four in-phase coupled unit-cells, high output power 140GHz signal is generated at the center of the CON by an in-phase power combination of the second harmonics generated by push-push frequency doublers. Moreover, a 9.7% frequency-tuning-range (FTR) centered at 133.5GHz is achieved by inductive tuing at each oscillator unit-cell. The proposed mm-wave signal source is farbicated in 65nm CMOS process with compact core chip area of 0.13mm. The measured results are: 3.5mW peak output power, 2.4% power efficiency and 26.9mW/mm power density.
机译:通过140GHz的零相位耦合振荡器网络(CON)演示了高输出功率和高效率的注入锁定毫米波(mm-wave)信号源。每个振荡器单元均由具有70°GHz时的零相移和0.4dB损耗的叉指耦合器设计,并通过推挽倍频器进一步倍频至140GHz。对于四个同相耦合的单位单元,通过推-推倍频器产生的二次谐波的同相功率组合在CON的中心处产生140GHz的高输出信号。此外,通过在每个振荡器单元上进行感应调谐,可实现以133.5GHz为中心的9.7%频率调谐范围(FTR)。拟议的毫米波信号源采用65nm CMOS工艺制造,具有紧凑的0.13mm核心芯片面积。测量结果为:3.5mW峰值输出功率,2.4%功率效率和26.9mW / mm功率密度。

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