BTI recovery in 22nm tri-gate technology

摘要

BTI recovery in tri-gate devices matches data and model predictions from planar devices, indicating a consistent physical basis for the mechanism and no influence from transistor architecture features such as crystal orientation, confinement, and vertical sidewalls. This consistency enables extending existing models established on planar devices to capture temperature and voltage dependencies of recovery. A new experimental technique allows extraction of an effective activation energy for recovery. The observation of complete recovery demonstrates that no permanent damage occurs during stress.