Reliability investigation of T-RAM cells for DRAM applications

摘要

In this work, we present a reliability investigation of T-RAM cells, considering their read failure, data retention and endurance. Experimental results on deca-nanometer devices reveal a successful cell operation solving the voltage trade-off for optimal performance on state-0 and state-1, whose origin is explained by clear pictures of the physical processes giving rise to read failure and limiting data retention. Moreover, endurance results appear very promising, with cell functionality preserved up to very high cycling doses.