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New breakdown data generation and analytics methodology to address BEOL and mol dielectric TDDB process development and technology qualification challenges

机译:新的故障数据生成和分析方法论,以应对BEOL和mol介电TDDB工艺开发和技术认证挑战

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Both MOL PC-CA spacer dielectric and BEOL low-k dielectric breakdown data are commonly convoluted with multiple variables induced by process steps such as lithography, etch, CMP, cleaning, and thin film deposition. The traditional method of stressing one DUT per die or multiple DUTs per die, without careful data deconvolution, is incapable of addressing current complex MOL PC-CA and BEOL low-k dielectric breakdown modeling challenges. In this paper, a new big data generation method plus an analytics procedure method is proposed to soundly evaluate both MOL and BEOL dielectric time-dependent-dielectric breakdown data. A new diagnostic reliability concept is for the first time proposed for comprehensive process diagnostics and more accurate reliability failure rate determination.
机译:MOL PC-CA隔离层电介质和BEOL低k介质击穿数据通常都与由诸如光刻,蚀刻,CMP,清洁和薄膜沉积等工艺步骤引起的多个变量进行卷积。在不进行仔细的数据反卷积的情况下,对每个芯片施加一个DUT或每个芯片多个DUT的传统方法无法解决当前复杂的MOL PC-CA和BEOL低k介电击穿建模挑战。在本文中,提出了一种新的大数据生成方法以及一种分析过程方法,以正确评估MOL和BEOL电介质随时间变化的电介质击穿数据。首次提出了一种新的诊断可靠性概念,用于全面的过程诊断和更准确的可靠性故障率确定。

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