机译:击穿数据生成和管芯内反卷积方法,以应对BEOL和MOL介质击穿挑战
IBM Syst & Technol Grp, Essex Jct, VT 05452 USA;
IBM Syst & Technol Grp, Essex Jct, VT 05452 USA;
IBM Syst & Technol Grp, Essex Jct, VT 05452 USA;
IBM Syst & Technol Grp, Hopewell Jct, NY 12533 USA;
IBM Syst & Technol Grp, Hopewell Jct, NY 12533 USA;
IBM Thomas J Watson Res Ctr, Yorktown Hts, NY 10598 USA;
IBM Syst & Technol Grp, Hopewell Jct, NY 12533 USA;
Low-k TDDB; Low-k reliability; MOL; PC-CA breakdown; Global die-to-die variation; Local within chip variation; Data deconvolution; Compound Weibull distribution; Compound Poisson area scaling; Voltage acceleration;
机译:电子注量驱动,Cu催化的界面击穿机制,用于BEOL低k时间依赖性介电击穿
机译:陷阱产生与电荷击穿的相关性(Q / sub bd /):电介质击穿的物理损伤模型
机译:硼硅酸盐玻璃致丝诱导介电击穿的介电击穿韧性
机译:新的故障数据生成和分析方法论,以应对BEOL和mol介电TDDB工艺开发和技术认证挑战
机译:聚合物电介质及其复合物中的电荷传输和电介质击穿。
机译:酸性水电化学环境中Si / SiO2阴极的介电击穿和击穿后溶解
机译:真空断路器双断液真空断路器和介电击穿概率分布的介电击穿特性研究