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Investigations on the High Temperature Compatibility of Various Adhesion Layers for Platinum

机译:对铂的各种粘附层高温相容性的研究

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In this paper we report on the high temperature compatibility of various adhesion layers for platinum (Pt) thin films. We investigated different adhesion layers, such as titanium (Ti), tantalum (Ta), aluminium nitride (AlN), aluminium oxide (Al_2O_3) and titanium oxide (TiO_2). All films were deposited on SiO_2/Si substrate by using the sputter technique. After deposition the films were annealed in air at 800 °C for different time lengths up to 16 hours. After annealing, Al_2O_3 and TiO_2 showed a dense oxide layer between Pt and SiO_2/Si and they seem to be suitable as adhesion layers for Pt at high temperatures. AlN is not suitable as adhesion layer for Pt at high temperatures. Ti and Ta are also not suitable forhigh temperatures, diffusing strongly into Pt layers and leading to the formation of oxide precipitates (TiO_x or TaO_x) in the Pt grain boundaries. In addition, the formation of Pt-crystallites (hillocks) on the surface was common in all the films.
机译:在本文中,我们报告了铂(PT)薄膜各种粘合层的高温相容性。我们研究了不同的粘附层,例如钛(Ti),钽(Ta),氮化铝(AlN),氧化铝(Al_2O_3)和氧化钛(TiO_2)。通过使用溅射技术将所有薄膜沉积在SiO_2 / Si衬底上。沉积后,将薄膜在800℃下在空气中退火,以进行不同的时间长度长达16小时。退火后,Al_2O_3和TiO_2在Pt和SiO_2 / Si之间显示致密氧化物层,并且它们似乎适合于高温下Pt的粘附层。 ALN不适合在高温下PT的粘附层。 Ti和Ta也不适合于高温,强烈地扩散到P​​t层中,并导致氧化物沉淀物(TiO_x或Tao_x)在Pt晶界中形成。另外,在表面上形成Pt-微晶(小丘)在所有薄膜中是常见的。

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