High- and Low-frequency Accelerated Stress Tests for Aging Assessment of MOSFET Parameters

摘要

Reliability assessment of power semiconductor devices requires accelerated stress tests. Different test methods might produce different results. In this paper, two different test methods are used for on-state resistance degradation for Si MOSFETs: High frequency cycling and low frequency cycling. Presented results indicate that the degradation of on-state resistance occurs irrespective of which method is used. Additionally, gate-to-source capacitance degradation is shown where results show that the gate-to-source impedance degrades over time.