Evolution of I-V Characteristics and Photo Effects of Heterojunction LBMO/ZnO Prepared by IBS

摘要

The hetero p-n junctions of LBMO/ZnO were fabricated by ion beam sputtering. The sample shows clear temperature-dependent rectifying current (I)-voltage (V) characteristics, and junction resistance vs temperature curve is reflected by the CMR nature based on DEC model. The sample shows two-step switching, then the I-V is composed of very-low-resistance (VLR), low-resistance (LR) and high-resistance (HR) regions. The whole I-V behavior is changed by measurement running current. The switching is caused by the spot current, and the original VLR is restored when the current is reduced. The mechanism of switching is proposed in terms of the percolation paths composed of metallic FM-grains. Photo illumination effect on the I-V was investigated. The currents are increased in VLR and HR regions by the illumination. Two origins are possible, electronic process due to hole injection, and phase process. The percolation path might be reinforced by the light.