Single crystalline GaAs nanoneedles grown on 46 lattice-mismatched sapphire with bright luminescence

摘要

Catalyst-free GaAs nanoneedles are grown on a c-plane sapphire substrate at 400°C using MOCVD. Despite of an extremely large lattice mismatch of 46%, the nanoneedles show single wurtzite-phase and bright room-temperature photoluminescence with narrow linewidths.