Single crystalline GaAs nanoneedles grown on 46 lattice-mismatched sapphire with bright luminescence

机译：GaAs纳米单晶生长在46％晶格不匹配的蓝宝石上，具有明亮的发光

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Catalyst-free GaAs nanoneedles are grown on a c-plane sapphire substrate at 400°C using MOCVD. Despite of an extremely large lattice mismatch of 46%, the nanoneedles show single wurtzite-phase and bright room-temperature photoluminescence with narrow linewidths.

机译：使用MOCVD在400°C的c面蓝宝石衬底上生长无催化剂的GaAs纳米针。尽管存在46％的极大晶格失配，纳米针仍显示纤锌矿单相和明亮的室温光致发光，且线宽较窄。

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《2010 Conference on Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS)》|2010年|p.1-2|共2页
会议地点 San Jose CA(US);San Jose CA(US);San Jose CA(US);San Jose CA(US)
作者
Chuang Linus C.; Ng Kar Wei; Tran Thai-Truong D.; Ko Wai Son; Moewe Michael; Crankshaw Shanna; Chen Roger; Chang-Hasnain Connie;
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Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, USA;

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原文格式 PDF
正文语种 eng
中图分类激光技术、微波激射技术;
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专利

1. GaAs nanoneedles grown on sapphire [J] . Linus C. Chuang, Michael Moewe, Kar Wei Ng, Applied Physics Letters . 2011,第12期

机译：蓝宝石上生长的GaAs纳米针
2. Single-crystalline NiCo_2O_4 nanoneedle arrays grown on conductive substrates as binder-free electrodes for high-performance supercapacitors [J] . Gen Qiang Zhang, Hao Bin Wu, Harry E. Hoster, Energy & environmental science . 2012,第11期

机译：在导电基板上生长的单晶NiCo_2O_4纳米针阵列，作为无粘合剂电极用于高性能超级电容器
3. Misfit Dislocations Study in MOVPE Grown Lattice-Mismatched InGaAs/GaAs Heterostructures by Means of DLTS Technique [J] . L. GELCZUK, M. DABROWSKA-SZATA, G. JOZWIAK, Acta Physica Polonica. A, General Physics, Physics of Condensed Matter, Optics and Quantum Electronics, Atomic and Molecular Physics, Applied Physics . 2004,第2期

机译：利用DLTS技术研究MOVPE生长的晶格不匹配的InGaAs / GaAs异质结构的错配位错
4. Single crystalline GaAs nanoneedles grown on 46 lattice-mismatched sapphire with bright luminescence [C] . Chuang Linus C., Ng Kar Wei, Tran Thai-Truong D., Conference on Lasers and Electro-Optics . 2010

机译：单晶GaAs纳瓦尼纳金属在46％格子错配的蓝宝石上生长，具有明亮的发光
5. Micro-Photoluminescence (mu-PL) Study of Core-Shell GaAs/GaAsSb Nanowires grown by Self-Assisted Molecular Beam Epitaxy [D] . Sami, Md Shifat Us. 2015

机译：通过自助分子束外延生长核心壳GaAs / Gaassb纳米线的微光致发光（MU-PL）研究
6. Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs [O] . Yuri G. Sadofyev, Nigamananda Samal 2010

机译：MBE在GaAs上生长的应变GaAsSb / GaAs QW结构的光致发光和能带排列
7. High-quality single crystalline NiO with twin phases grown on sapphire substrate by metalorganic vapor phase epitaxy [O] . Kazuo Uchida, Ken-ichi Yoshida, Dongyuan Zhang, 2012

机译：通过金属有机气相外延生长在蓝宝石衬底上的双相高品质单晶NiO
8. Photoluminescence Mapping and Angle-Resolved Photoluminescence of MBE- Grown InGaAs/GaAs RC LED and VCSEL Structures. [R] . Wojcik, A., Ochalski, T. J., Muszalski, J., 2002

机译：mBE生长的InGaas / Gaas RC LED和VCsEL结构的光致发光映射和角分辨光致发光。

Single crystalline GaAs nanoneedles grown on 46 lattice-mismatched sapphire with bright luminescence

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