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Room Temperature Operated 3.1-μm Type-I GaSb-based Diode Lasers with 80mW Continuous Wave Output Power

机译：室温操作3.1-μm型型煤气基二极管激光器，具有80MW连续波输出功率

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High-power diode lasers with heavily-strained In(Al)GaAsSb type-I quantum-well active region emitting at 3.1 μm at room temperature are reported. Devices operate in continuous-wave regime with output power above 200mW and 80mW at 250K and 285K, correspondingly.

机译：报告了在室温下发射3.1μm的（A1）型型型量子阱的高功率二极管激光器在（A1）型型量子型量子阱有源区。器件在连续波形方案中运行，输出功率高于200mW以上，80mW，250k和285k，相应地。

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《Conference on Lasers and Electro-Optics》|2008年||共2页
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L. Shterengas; G. Kipshidze; T. Hosoda; D. Donetsky; G. Belenky;
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中图分类 TN24-53;
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专利

1. Type-I GaSb-Based Laser Diodes Operating in 3.1- to 3.3-$mu$m Wavelength Range [J] . Hosoda T., Kipshidze G., Tsvid G., Photonics Technology Letters, IEEE . 2010,第10期

机译：基于I型GaSb的激光二极管，工作波长范围为3.1至3.3μm
2. Room temperature operated 3.1 μm type-Ⅰ GaSb-based diode lasers with 80 mW continuous-wave output power [J] . L. Shterengas, G. Belenky, G. Kipshidze, Applied Physicsletters . 2008,第17期

机译：室温操作的3.1μmⅠ型GaSb基二极管激光器，具有80 mW连续波输出功率
3. High power 2.4 μm heavily strained type-Ⅰ quantum well GaSb-based diode lasers with more than 1 W of continuous wave output power and a maximum power-conversion efficiency of 17.5% [J] . L. Shterengas, G. Belenky, M. V. Kisin, Applied Physics Letters . 2007,第1期

机译：高功率2.4μm重应变Ⅰ型量子阱GaSb基二极管激光器，连续波输出功率超过1 W，最大功率转换效率为17.5％
4. Room Temperature Operated 3.1-μm Type-I GaSb-based Diode Lasers with 80mW Continuous Wave Output Power [C] . L. Shterengas, G. Kipshidze, T. Hosoda, Conference on Lasers and Electro-Optics . 2008

机译：室温操作3.1-μm型型煤气基二极管激光器，具有80MW连续波输出功率
5. High Power, Narrow Spectrum and Passively Mode-Locked GaSb-Based Type-I Quantum Well Cascade Diode Lasers [D] . Feng, Tao. 2018

机译：高功率，窄谱和被动模式锁定的基于型型I量子井级联二极管激光器
6. Room-temperature continuous-wave electrically pumped InGaN/GaN quantum well blue laser diode directly grown on Si [O] . Yi Sun, Kun Zhou, Meixin Feng, 2018

机译：直接在Si上生长的室温连续波电泵浦InGaN / GaN量子阱蓝色激光二极管
7. Continuous-wave operation above room temperature of GaSb-based laser diodes grown on Si [O] . J. R. Reboul, L. Cerutti, J. B. Rodriguez, 2011

机译：在Si上生长的喘气激光二极管室温的连续波操作
8. Diode Lasers and Light Emitting Diodes Operating at Room Temperature with Wavelengths Above 3 Micrometers. [R] . Belensky, G., Shterengas, L., Donetsky, D., 2011

机译：二极管激光器和发光二极管在室温下工作，波长超过3微米。

Room Temperature Operated 3.1-μm Type-I GaSb-based Diode Lasers with 80mW Continuous Wave Output Power

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