Passive and hybrid mode-locking from a monolithic InGaN/GaN laser diode

机译：来自单片Ingan / GaN激光二极管的被动和混合模式锁定

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We report 4ps and 8ps pulse generation from a two-section monolithic InGaN/GaN laser by hybrid and passive mode-locking, respectively. Pulse trains at a repetition rate of 28.6GHz and an emission wavelength of 422nm are generated.

机译：通过分别通过混合和被动模式锁定从两截面单片Ingan / GaN激光报告4ps和8ps脉冲。生成重复率为28.6GHz的脉冲列表和422nm的发射波长。

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《Conference on Lasers and Electro-Optics》|2013年||共2页
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Olle V.F.; Wonfor A.; Sulmoni L.A.M.; Vasilamp; #039; ev P.P.;
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中图分类激光技术、微波激射技术;
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入库时间 2022-08-21 05:01:09

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1. Analysis of harmonic (sub) THz passive mode-locking in monolithic compound cavity Fabry-Perot and ring laser diodes [J] . Avrutin E.A., Marsh J.H. IEE Proceedings. Part J . 1999,第1期

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2. Passive and Hybrid Mode-Locking of an External-Cavity GaInN Laser Diode Incorporating a Strong Saturable Absorber [J] . Tomoyuki Oki, Kyousuke Saito, Hideki Watanabe, Applied physics express . 2010,第3期

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3. Polarization-enhanced InGaN/GaN-based hybrid tunnel junction contacts to GaN p–n diodes and InGaN LEDs [J] . Mughal Asad J., Young Erin C., Alhassan Abdullah I., Applied physics express . 2017,第12期

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4. Passive and hybrid mode-locking from a monolithic InGaN/GaN laser diode [C] . Olle V.F., Wonfor A., Sulmoni L.A.M., Conference on Lasers and Electro-Optics . 2013

机译：单片InGaN / GaN激光二极管的无源和混合锁模
5. Monolithic etched-facet triangular waveguide diode ring laser arrays for hybrid optical packages using passive alignment. [D] . Wilson, Karen Irene. 1998

机译：用于无源对准的混合光学封装的整体式刻蚀面三角形波导二极管环形激光器阵列。
6. InGaN/GaN Distributed Feedback Laser Diodes with Surface Gratings and Sidewall Gratings [O] . Zejia Deng, Junze Li, Mingle Liao, 2019

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7. An experimental and numerical study of Q-switched mode-locking in monolithic semiconductor diode lasers [O] . Flynn MB, OFaolain Liam, Krauss Thomas Fraser 2004

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8. MBE Growth and Properties of GaN, InGaN and GaN/InGaN Quantum Well Structures for Laser Diode Applications [R] . Schetzina, J. F. 2001

机译：用于激光二极管应用的GaN，InGaN和GaN / InGaN量子阱结构的mBE生长和性质

Passive and hybrid mode-locking from a monolithic InGaN/GaN laser diode

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