Characterization of 0.5 mm thick films of orientation-patterned GaAs for nonlinear optical applications

摘要

Summary form only given. Quasi-phasematched frequency conversion in orientation-patterned GaAs (OPGaAs) is a promising way to generate mid-infrared radiation from near-infrared laser sources. GaAs has very attractive properties for such applications: a large nonlinear susceptibility (d/sub 14//spl sim/90 pm/V), transparency between 1 and 12 /spl mu/m, a high thermal conductivity (46 W/m-K), and a high optical damage threshold (60 MW/cm/sup 2/ for 10 ns pulses). We report optical and crystallographic properties of epitaxial OPGaAs films with a thickness as large as 0.5 mm, sufficient for these materials to be useful in a wide variety of nonlinear optical applications.