Thin terahertz detectors and emitters based on low-temperature-grown GaAs on sapphire

摘要

In conclusion we developed a fabrication technique, alternative to epitaxial liftoff, which enhances the performance of THz antenna detectors and allows building probe structures on top of the antenna dipole by means of etching of GaAs substrate. When used as emitters, a sample to be imaged can be brought as close as 1μm to the THz emission point. The application of these devices for THz near-field imaging will be discussed.