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A novel voltage clamp circuit for the measurement of transistor dynamic on-resistance

机译:一种用于测量晶体管动态导通电阻的新型电压钳位电路

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For determining the dynamic on-resistance Rdyn,on of a power transistor, the voltage and current waveforms have to be measured during the switching operation. In measurements of voltage waveforms, using an oscilloscope, the characteristics of an amplifier inside the oscilloscope are distorted when the range of the measurement channel is not set wide enough to measure both on-state and off-state voltage, resulting in failure to accurately measure the voltage waveforms. A novel voltage clamp circuit improving the accuracy of the transistor on-state voltage measurement is presented. The measurement accuracy is improved by clamping the off-state voltage across the transistor to a lower voltage that is still greater than the on-state voltage. Unlike traditional clamping circuit, the presented voltage clamp circuit does not introduce delay caused by RC time constants keeping the voltage waveform clear even during state transitions of the evaluated semiconductor device for frequencies up to 1MHz.
机译:为了确定动态导通电阻RDYN,在电源晶体管的开启,必须在切换操作期间测量电压和电流波形。在使用示波器的电压波形测量中,当测量通道的范围不足以测量状态和断开状态电压时,示波器内部示波器内部的特性失真,导致无法准确测量电压波形。提出了一种提高晶体管接通状态电压测量精度的新型电压钳位电路。通过将晶体管两端的断开状态电压夹紧到仍然大于导通状态电压的较低电压来提高测量精度。与传统的钳位电路不同,即使在高达1MHz的频率的频率的状态转换期间,所示的电压钳位电路也不会引入由RC时间常数保持电压波形的延迟。

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