首页> 外文会议>Instrumentation and Measurement Technology Conference (I2MTC), 2012 IEEE International >A novel voltage clamp circuit for the measurement of transistor dynamic on-resistance
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A novel voltage clamp circuit for the measurement of transistor dynamic on-resistance

机译:一种用于测量晶体管动态导通电阻的新型电压钳位电路

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For determining the dynamic on-resistance Rdyn,on of a power transistor, the voltage and current waveforms have to be measured during the switching operation. In measurements of voltage waveforms, using an oscilloscope, the characteristics of an amplifier inside the oscilloscope are distorted when the range of the measurement channel is not set wide enough to measure both on-state and off-state voltage, resulting in failure to accurately measure the voltage waveforms. A novel voltage clamp circuit improving the accuracy of the transistor on-state voltage measurement is presented. The measurement accuracy is improved by clamping the off-state voltage across the transistor to a lower voltage that is still greater than the on-state voltage. Unlike traditional clamping circuit, the presented voltage clamp circuit does not introduce delay caused by RC time constants keeping the voltage waveform clear even during state transitions of the evaluated semiconductor device for frequencies up to 1MHz.
机译:为了确定功率晶体管的动态导通电阻Rdyn,on,必须在开关操作期间测量电压和电流波形。在使用示波器测量电压波形时,如果测量通道的范围设置得不够宽,无法同时测量通态和断态电压,则示波器内部放大器的特性就会失真,从而导致无法精确测量电压波形。提出了一种新型的电压钳位电路,可以提高晶体管导通状态电压测量的精度。通过将晶体管两端的截止状态电压钳位到仍然大于导通状态电压的较低电压,可以提高测量精度。与传统的钳位电路不同,提出的电压钳位电路不会引入由RC时间常数引起的延迟,即使在评估的半导体器件的状态转换过程中,即使频率高达1MHz,电压波形也保持清晰。

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