Simulation study for Dual Material Gate Hetero-Dielectric TFET: Static performance analysis for analog applications

摘要

This paper presents simulation study of Static characteristics for DMG (Dual Material Gate) Hetero-Dielectric (H-D) Tunnel FET. Here, two previously reported device architectures i.e. a DMG Single Dielectric TFET and SMG (Single Material Gate) Hetero-Dielectric TFET have been optimized by tuning the work functions and length and later on their combined impact on the proposed device architecture i.e. DMG Hetero-Dielectric Tunnel FET (DMG H-D TFET) is been studied. Electrical parameters such as threshold voltage, drain current I_ds, Sub threshold Slope, I_on to I_off ratio, ambipolar current I_amb have been studied. Some of the important analog parameters like transconductance g_m, drain conductance g_d, Output resistance R_out, transconductance generation efficiency g_m/I_ds have also been studied using ATLAS Device Simulation Software.