Novel implantation process of carbon nanotubes for plugs and vias, and their integration with transferred multilayer graphene wires

摘要

We have developed a novel process, the implantation of carbon nanotubes (CNTs) into holes like plugs, vias, and through-silicon vias (TSVs) for the first time. The developed low-temperature process is suitable for back-end-of-line (BEOL) processes of LSI. With this approach, we can use high-quality CNTs grown at high temperature on a different substrate and densify CNTs. Consequently, the implanted CNT plugs had a resistance one order of magnitude lower than the directly grown CNT plugs. In addition, we successfully integrated the implanted CNT plug with transferred multilayer graphene (MLG) wires for all carbon interconnects.