Near ballistic sub-7 nm Junctionless FET featuring 1 nm extremely-thin channel and raised S/D structure

摘要

In this work, we report the realization of In_0.53Ga_0.47As Junctionless FET (JLFET) with the shortest reported channel length L_CH (6 nm) for any III-V transistors. The JLFET features a 1 nm-thick extremely-thin channel sandwiched between a 1 nm-thick InP cap and the InP substrate, and a heavily doped raised S/D structure. Peak transconductance G_{m. Peak} of 1480 μS/μm at V_DS = 0.7 V with an EOT of 2.5 nm and an ultra-low S/D resistance R_SD of 165 Ω.μm were achieved. In addition, the ballistic behavior of sub-7 nm III-V transistors was experimentally investigated by using a novel extraction approach for the first time. The In_0.53Ga_0.47As JLFET with L_CH of 6 nm was demonstrated to have a mean free path λ of 27.2 nm and nearly ballistic transport with ballistic efficiency B of 0.82.